An SRAM cell having at least four field effect transistors includes, a) at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjacent thereto; and b) the Vcc line and the ground...http://www.google.com.tw/patents/US5969994?utm_source=gb-gplus-share專利 US5969994 - Sram cell employing substantially vertically elongated pull-up resistors
