An index-guided semiconductor laser having a grooved waveguide which uses the optical confinement resulting from the bandgap difference between two phases of OMVPE formed AlGaInP, and in which the higher bandgap phase occurs with AlGaInP grown on substrates orientated at angles less than 55 degrees with...http://www.google.com.tw/patents/US5400356?utm_source=gb-gplus-share專利 US5400356 - Index-guided laser on grooved (001) substrate
