An antifuse in an integrated circuit which has first and second conducting lines, a semiconductor layer of amorphous silicon between the first and second conducting lines, and a barrier metal layer of TiN between the semiconductor layer and the first conducting layer is disclosed. The TiN layer is nonstoichiometric...http://www.google.com.tw/patents/US5329153?utm_source=gb-gplus-share專利 US5329153 - Antifuse with nonstoichiometric tin layer and method of manufacture thereof
