There is provided a redundancy circuit of a ferroelectric memory device capable of performing a repair software-wise, the redundancy circuit of a ferroelectric semiconductor device having an address buffer, a normal decoder, a normal memory cell array and a redundancy circuit, said redundancy circuit...http://www.google.com.tw/patents/US6157585?utm_source=gb-gplus-share專利 US6157585 - Redundancy circuit and method of ferroelectric memory device
