±M§Q US8040154 - Software programmable logic using spin transfer torque magnetoresistive devices

Systems, circuits and methods for software programmable logic using Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology are disclosed. Magnetic tunnel junction (MTJ) storage elements can be formed into input planes and output planes. The input planes and output planes can...http://www.google.com.tw/patents/US8040154?utm_source=gb-gplus-share±M§Q US8040154 - Software programmable logic using spin transfer torque magnetoresistive devices