An electrical switching device includes a semiconductor having a channel therein which is proximate to at least on channel tap in an extension region and also to a gate. A conductor (e.g., a metal) is disposed proximate to the extension region but is electrically isolated from both the extension region...http://www.google.com.tw/patents/US6891234?utm_source=gb-gplus-share專利 US6891234 - Transistor with workfunction-induced charge layer
