In a ferroelectric memory of 1T1C configuration in which a memory cell consists of 1 transistor and 1 capacitor per bit, the capacitance of a dummy memory cell capacitor, i.e., the area occupied by the dummy memory cell capacitor is determined based on the capacitive characteristic of a main memory cell...http://www.google.com.tw/patents/US5898608?utm_source=gb-gplus-share專利 US5898608 - Method for operating a ferroelectric memory
