A method for forming a field effect transistor device employs a self-aligned etching of a semiconductor substrate to form a recessed channel region in conjunction with a pair of raised source/drain regions. The method also provides for forming and thermally annealing the pair of source/drain regions...http://www.google.com.tw/patents/US7429769?utm_source=gb-gplus-share專利 US7429769 - Recessed channel field effect transistor (FET) device
