A semiconductor structure is formed of nitrides of group III metals having wurtzite crystal structure and grown in vapor phase on a (0001) oriented semiconductor substrate. The structure comprises a bottom cladding layer, a top cladding layer, and a diffusion region positioned between the cladding layers...http://www.google.com.tw/patents/US7763904?utm_source=gb-gplus-share專利 US7763904 - Semiconductor structure and method of manufacturing a semiconductor structure
