In a data read circuit, for a semiconductor storage device, data of a memory cell (11) selected according to an address is inputted to a sense amplifier (22) via a pair of complementary first data lines (N1 to N6). The sense amplifier outputs the inputted and amplified data to a pair of complementary...http://www.google.com.tw/patents/US5068831?utm_source=gb-gplus-share專利 US5068831 - Data read circuit for semiconductor storage device
