A high-breakdown voltage MOSFET has source and drain layers arranged to interpose a channel region therebetween in a channel-length direction and to have LDD portions having a low carrier-impurity concentration, respectively, on sides facing each other. A gate electrode faces the channel region through...http://www.google.com.tw/patents/US6084283?utm_source=gb-gplus-share專利 US6084283 - Semiconductor device and method of manufacturing the same
