A memory includes a first ferroelectric capacitor and a second ferroelectric capacitor electrically connected in a parallel arrangement, and writing circuitry that writes controllably different polarization states into the two ferroelectric capacitors using a single input signal. Read circuitry senses...http://www.google.com.tw/patents/US5487030?utm_source=gb-gplus-share專利 US5487030 - Ferroelectric interruptible read memory
