An asymmetrical N-channel IGFET and an asymmetrical P-channel IGFET are disclosed. One or both IGFETs include a lightly doped drain region, heavily doped source and drain regions, and an ultra-heavily doped source region. Preferably, the heavily doped source region and lightly doped drain...http://www.google.com.tw/patents/US5789787?utm_source=gb-gplus-share專利 US5789787 - Asymmetrical N-channel and P-channel devices
