An application-specific SRAM memory cell includes first and second cross-coupled inverters coupled at first and second nodes for storing a bit of information at the first node and a complement of the bit at the second node, first and second series-connected transistors for coupling a write data signal...http://www.google.com.tw/patents/US5870331?utm_source=gb-gplus-share專利 US5870331 - Application-specific SRAM memory cell for low voltage, high speed operation
