A non-volatile memory cell (10) includes a charge-storing node (16). An electrically insulating first layer (76) is coupled between the node and a source of a first voltage (22). An electrically insulating second layer (66) is coupled between the node and a source of a second voltage (20-21). The area...http://www.google.com.tw/patents/US20050111258?utm_source=gb-gplus-share專利 US20050111258 - Non-voltatile memory cell techniques
