Fluorinated chemical precursors, methods of manufacture, polymer thin films with low dielectric constants, and integrated circuits comprising primarily of sp.sup.2 C-F and some hyperconjugated sp.sup.3 C-F bonds are disclosed in this invention. Precursors are disclosed for creating fluorinated silanes...http://www.google.com.tw/patents/US6020458?utm_source=gb-gplus-share專利 US6020458 - Precursors for making low dielectric constant materials with improved thermal stability
