A method and structure for high capacitance memory cells is provided. The method includes forming a trench capacitor in a semiconductor substrate. A self-structured mask is formed on the interior surface of the trench. The interior surface of the trench is etched to form an array of silicon pillars....http://www.google.com.tw/patents/US20050026360?utm_source=gb-gplus-share專利 US20050026360 - Method and structure for high capacitance memory cells
