In production of a semiconductor device using an SOI technology by an adhesion method, a thin film with high thermal conductivity is formed between an insulating supporting substrate and a single-crystal silicon film formed thereon to enhance uniformity of a thermal distribution. The single-crystal silicon...http://www.google.com.tw/patents/US6232142?utm_source=gb-gplus-share專利 US6232142 - Semiconductor device and method for making the same, electro-optical device using the same and method for making the electro-optical device, and electronic apparatus using the electro-optical device