A preferred embodiment of the present invention provides a method and apparatus for correcting the offset induced by Field Effect Transistor (FET) photo-conductive effects in a solid state X-ray detector. The method and apparatus include reading out twice as many rows (scan lines) as actually exist in...http://www.google.com.tw/patents/US6400798?utm_source=gb-gplus-share專利 US6400798 - Simple means for measuring the offset induced by photo-conductive FETs in a solid state X-ray detector
