According to one embodiment, an NiV adhesion layer is deposited over the backside surface of a semiconductor substrate. The semiconductor substrate might comprise a group III-V compound semiconductor. The NiV adhesion layer can be deposited over the backside surface of the semiconductor substrate in,...http://www.google.com.tw/patents/US6614117?utm_source=gb-gplus-share專利 US6614117 - Method for metallization of a semiconductor substrate and related structure
