A chemical mechanical polishing (CMP) process using a chemically active slurry having a polarity selected to affect the relative oxidation rates of respective crystalline planes of a polycrystalline surface being polished. The slurry polarity is controlled to equilibrate the material removal rates from...http://www.google.com.tw/patents/US6899596?utm_source=gb-gplus-share專利 US6899596 - Chemical mechanical polishing of dual orientation polycrystalline materials
