When polycrystalline silicon germanium film is used for gate electrodes in a MOS transistor apparatus, there have been problems of reduced reliability in the gate insulating film, due to stress in the silicon germanium grains. Therefore, a polysilicon germanium film is formed, after forming silicon fine...http://www.google.com.tw/patents/US20040051139?utm_source=gb-gplus-share專利 US20040051139 - MOS transistor apparatus and method of manufacturing same
