A copper damascene structure including a titanium-silicon-nitride barrier layer formed by organic-metallic atomic layer deposition is disclosed. Copper is selectively deposited by a CVD process and/or by an electroless deposition technique. ...http://www.google.com.tw/patents/US20020089063?utm_source=gb-gplus-share專利 US20020089063 - Copper dual damascene interconnect technology
