A semiconductor device includes a substrate portion having a plurality of diffusion regions defined therein. The semiconductor device includes a gate electrode level region including a number of conductive features defined to extend in only a first parallel direction. Adjacent ones of the number of conductive...http://www.google.com.tw/patents/US20100032722?utm_source=gb-gplus-share專利 US20100032722 - Semiconductor Device Portion Having Gate Electrode Conductive Structures Formed from Linear Shaped Gate Electrode Layout Features Defined with Minimum End-to-End Spacing and Having At Least Eight Transistors
