A single-electron transistor (1) has an elongate conductive channel (2) and a side gate (3) formed in a 5 nm-thick layer (4) of Ga0.98Mn0.02As. The single-electron transistor (1) is operable, in a first mode, as a transistor and, in a second mode, as non-volatile memory....http://www.google.com.tw/patents/US7893426?utm_source=gb-gplus-share專利 US7893426 - Single-charge tunnelling device
