The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective,...http://www.google.com.tw/patents/US6514782?utm_source=gb-gplus-share專利 US6514782 - Method of making a III-nitride light-emitting device with increased light generating capability
