CN103558993A - 具有易失性和非易失性存储器的混合固态存储器系统 - Google Patents
具有易失性和非易失性存储器的混合固态存储器系统 Download PDFInfo
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- CN103558993A CN103558993A CN201310394806.9A CN201310394806A CN103558993A CN 103558993 A CN103558993 A CN 103558993A CN 201310394806 A CN201310394806 A CN 201310394806A CN 103558993 A CN103558993 A CN 103558993A
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- Prior art keywords
- data
- memory
- volatile memory
- response
- solid state
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell
- G11C14/0018—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell whereby the nonvolatile element is an EEPROM element, e.g. a floating gate or metal-nitride-oxide-silicon [MNOS] transistor
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/613325 | 2006-12-20 | ||
US11/613,325 US7554855B2 (en) | 2006-12-20 | 2006-12-20 | Hybrid solid-state memory system having volatile and non-volatile memory |
Related Parent Applications (1)
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CN2007800469440A Division CN101563729B (zh) | 2006-12-20 | 2007-12-18 | 具有易失性和非易失性存储器的混合固态存储器系统 |
Publications (1)
Publication Number | Publication Date |
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CN103558993A true CN103558993A (zh) | 2014-02-05 |
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Family Applications (2)
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CN2007800469440A Active CN101563729B (zh) | 2006-12-20 | 2007-12-18 | 具有易失性和非易失性存储器的混合固态存储器系统 |
CN201310394806.9A Pending CN103558993A (zh) | 2006-12-20 | 2007-12-18 | 具有易失性和非易失性存储器的混合固态存储器系统 |
Family Applications Before (1)
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CN2007800469440A Active CN101563729B (zh) | 2006-12-20 | 2007-12-18 | 具有易失性和非易失性存储器的混合固态存储器系统 |
Country Status (8)
Country | Link |
---|---|
US (4) | US7554855B2 (zh) |
EP (1) | EP2100306A4 (zh) |
JP (4) | JP5619423B2 (zh) |
KR (2) | KR101495975B1 (zh) |
CN (2) | CN101563729B (zh) |
CA (1) | CA2669690A1 (zh) |
TW (2) | TWI476780B (zh) |
WO (1) | WO2008074140A1 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104575595A (zh) * | 2014-12-12 | 2015-04-29 | 杭州华澜微科技有限公司 | 非易失性随机存取的存储装置 |
CN106201902A (zh) * | 2016-06-24 | 2016-12-07 | 中电海康集团有限公司 | 一种sram位元与非易失性存储位元组成的复合阵列模块及其读写控制方法 |
CN103811051B (zh) * | 2014-02-17 | 2017-01-11 | 上海新储集成电路有限公司 | 一种分层存储器阵列及其工作方法 |
CN106484628A (zh) * | 2015-08-27 | 2017-03-08 | 三星电子株式会社 | 基于事务的混合存储器模块 |
CN107209718A (zh) * | 2015-03-11 | 2017-09-26 | 拉姆伯斯公司 | 高性能非易失性存储器模块 |
CN107515729A (zh) * | 2016-06-24 | 2017-12-26 | 中电海康集团有限公司 | 一种sram位元与非易失性存储位元组成的复合阵列模块及工作方法 |
CN107910031A (zh) * | 2016-09-16 | 2018-04-13 | 上海博维逻辑半导体技术有限公司 | 混合非易失性存储器结构及其方法 |
CN108268391A (zh) * | 2016-12-30 | 2018-07-10 | 三星电子株式会社 | 半导体系统及其控制方法 |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7554855B2 (en) * | 2006-12-20 | 2009-06-30 | Mosaid Technologies Incorporated | Hybrid solid-state memory system having volatile and non-volatile memory |
EP3279798B1 (en) * | 2007-03-30 | 2020-07-29 | Rambus Inc. | System including hierarchical memory modules having different types of integrated circuit memory devices |
US8874831B2 (en) * | 2007-06-01 | 2014-10-28 | Netlist, Inc. | Flash-DRAM hybrid memory module |
US7855916B2 (en) * | 2007-10-24 | 2010-12-21 | Rao G R Mohan | Nonvolatile memory systems with embedded fast read and write memories |
US10236032B2 (en) * | 2008-09-18 | 2019-03-19 | Novachips Canada Inc. | Mass data storage system with non-volatile memory modules |
JP5198245B2 (ja) | 2008-12-27 | 2013-05-15 | 株式会社東芝 | メモリシステム |
US8489843B2 (en) * | 2010-04-20 | 2013-07-16 | Chip Memory Technology, Inc. | Configurable memory device |
US9058675B2 (en) * | 2010-05-29 | 2015-06-16 | Intel Corporation | Non-volatile storage for graphics hardware |
US20120026802A1 (en) * | 2010-07-30 | 2012-02-02 | Emanuele Confalonieri | Managed hybrid memory with adaptive power supply |
US10838646B2 (en) | 2011-07-28 | 2020-11-17 | Netlist, Inc. | Method and apparatus for presearching stored data |
US10380022B2 (en) | 2011-07-28 | 2019-08-13 | Netlist, Inc. | Hybrid memory module and system and method of operating the same |
US10198350B2 (en) | 2011-07-28 | 2019-02-05 | Netlist, Inc. | Memory module having volatile and non-volatile memory subsystems and method of operation |
US8570799B2 (en) * | 2011-08-16 | 2013-10-29 | Intel Mobile Communications GmbH | Magnetic random access memory with conversion circuitry |
EP3712774B1 (en) | 2011-09-30 | 2023-02-15 | Tahoe Research, Ltd. | Apparatus and method for implementing a multi-level memory hierarchy |
EP3451176B1 (en) | 2011-09-30 | 2023-05-24 | Intel Corporation | Apparatus and method for implementing a multi-level memory hierarchy having different operating modes |
US9342453B2 (en) | 2011-09-30 | 2016-05-17 | Intel Corporation | Memory channel that supports near memory and far memory access |
EP2761480A4 (en) * | 2011-09-30 | 2015-06-24 | Intel Corp | APPARATUS AND METHOD FOR IMPLEMENTING MULTINIVE MEMORY HIERARCHY ON COMMON MEMORY CHANNELS |
WO2013062542A1 (en) | 2011-10-26 | 2013-05-02 | Hewlett-Packard Development Company | Segmented caches |
US9697872B2 (en) * | 2011-12-07 | 2017-07-04 | Cypress Semiconductor Corporation | High speed serial peripheral interface memory subsystem |
US9507534B2 (en) | 2011-12-30 | 2016-11-29 | Intel Corporation | Home agent multi-level NVM memory architecture |
KR101380602B1 (ko) * | 2012-03-07 | 2014-04-04 | 한국과학기술원 | 하이브리드 메모리 시스템에서 비휘발성 메모리의 웨어레벨링 방법 및 하이브리드 메모리 시스템 |
WO2013165385A1 (en) * | 2012-04-30 | 2013-11-07 | Hewlett-Packard Development Company, L.P. | Preventing a hybrid memory module from being mapped |
US9063864B2 (en) | 2012-07-16 | 2015-06-23 | Hewlett-Packard Development Company, L.P. | Storing data in presistent hybrid memory |
JP6000754B2 (ja) * | 2012-08-28 | 2016-10-05 | キヤノン株式会社 | 画像処理装置、画像処理装置の制御方法、及びプログラム |
CN103631722A (zh) * | 2012-08-29 | 2014-03-12 | 联想(北京)有限公司 | 一种数据处理方法及电子设备 |
US9471484B2 (en) | 2012-09-19 | 2016-10-18 | Novachips Canada Inc. | Flash memory controller having dual mode pin-out |
US9417819B2 (en) * | 2012-11-13 | 2016-08-16 | Toshiba, Corporation | Cache device for hard disk drives and methods of operations |
EP2923358A4 (en) * | 2012-11-20 | 2016-06-29 | Charles I Peddle | SSD ARCHITECTURES |
WO2015047266A1 (en) * | 2013-09-26 | 2015-04-02 | Intel Corporation | Block storage apertures to persistent memory |
US9436563B2 (en) | 2013-10-01 | 2016-09-06 | Globalfoundries Inc. | Memory system for mirroring data |
US9400745B2 (en) * | 2013-11-06 | 2016-07-26 | International Business Machines Corporation | Physical address management in solid state memory |
CN111274063A (zh) * | 2013-11-07 | 2020-06-12 | 奈特力斯股份有限公司 | 混合内存模块以及操作混合内存模块的系统和方法 |
US10248328B2 (en) | 2013-11-07 | 2019-04-02 | Netlist, Inc. | Direct data move between DRAM and storage on a memory module |
JP2015141575A (ja) * | 2014-01-29 | 2015-08-03 | 京セラドキュメントソリューションズ株式会社 | 画像形成装置および制御方法 |
US9684853B2 (en) * | 2014-04-15 | 2017-06-20 | Kyocera Document Solutions Inc. | Image forming apparatus that writes data from volatile memory to non-volatile memory |
TWI525428B (zh) * | 2014-06-04 | 2016-03-11 | 仁寶電腦工業股份有限公司 | 複合儲存單元的管理方法及其電子裝置 |
CA2894936C (en) * | 2014-06-27 | 2018-02-27 | Chenyi Zhang | Controller, flash memory apparatus, and method for writing data into flash memory apparatus |
US20160188414A1 (en) * | 2014-12-24 | 2016-06-30 | Intel Corporation | Fault tolerant automatic dual in-line memory module refresh |
WO2016171934A1 (en) * | 2015-04-20 | 2016-10-27 | Netlist, Inc. | Memory module and system and method of operation |
US9536619B2 (en) * | 2015-05-27 | 2017-01-03 | Kabushiki Kaisha Toshiba | Hybrid-HDD with improved data retention |
US9904490B2 (en) * | 2015-06-26 | 2018-02-27 | Toshiba Memory Corporation | Solid-state mass storage device and method for persisting volatile data to non-volatile media |
US10838818B2 (en) | 2015-09-18 | 2020-11-17 | Hewlett Packard Enterprise Development Lp | Memory persistence from a volatile memory to a non-volatile memory |
US9761312B1 (en) | 2016-03-16 | 2017-09-12 | Micron Technology, Inc. | FeRAM-DRAM hybrid memory |
US20190095136A1 (en) * | 2016-03-29 | 2019-03-28 | Sony Corporation | Memory control device, storage device, and information processing system |
WO2018106441A1 (en) | 2016-12-09 | 2018-06-14 | Rambus Inc. | Memory module for platform with non-volatile storage |
US10785301B2 (en) * | 2017-08-03 | 2020-09-22 | Toshiba Memory Corporation | NVM express over fabrics |
US10437499B2 (en) * | 2017-12-22 | 2019-10-08 | Nanya Technology Corporation | Hybrid memory system and method of operating the same |
US10691805B2 (en) * | 2018-02-14 | 2020-06-23 | GM Global Technology Operations LLC | Resident manufacturing test software based system for mitigating risks associated with vehicle control modules |
CN109741777A (zh) * | 2018-12-28 | 2019-05-10 | 上海新储集成电路有限公司 | 一种提高速度和保持数据时间的存储器 |
US11307779B2 (en) * | 2019-09-11 | 2022-04-19 | Ceremorphic, Inc. | System and method for flash and RAM allocation for reduced power consumption in a processor |
CN115145489B (zh) * | 2022-07-22 | 2023-03-24 | 北京熵核科技有限公司 | 一种基于缓存结构的对象扫描方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0566306A2 (en) * | 1992-04-16 | 1993-10-20 | Hitachi, Ltd. | Semiconductor memory device |
CN1427340A (zh) * | 2001-12-19 | 2003-07-02 | 株式会社东芝 | 电子装置和控制电子装置运行的方法 |
CN1692330A (zh) * | 2002-10-08 | 2005-11-02 | 松下电器产业株式会社 | 程序更新方法和终端设备 |
CN1717662A (zh) * | 2002-11-28 | 2006-01-04 | 株式会社瑞萨科技 | 存储器模块、存储器系统和信息仪器 |
CN1794214A (zh) * | 2005-12-22 | 2006-06-28 | 北京中星微电子有限公司 | 一种对非易失性存储器进行直接存储访问的方法及其装置 |
Family Cites Families (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5430859A (en) | 1991-07-26 | 1995-07-04 | Sundisk Corporation | Solid state memory system including plural memory chips and a serialized bus |
US5359569A (en) * | 1991-10-29 | 1994-10-25 | Hitachi Ltd. | Semiconductor memory |
JPH05216775A (ja) * | 1991-10-29 | 1993-08-27 | Hitachi Ltd | 半導体記憶装置 |
JP2768618B2 (ja) * | 1992-08-28 | 1998-06-25 | シャープ株式会社 | 半導体ディスク装置 |
JPH07200390A (ja) * | 1993-12-28 | 1995-08-04 | Toshiba Corp | データアクセス方法 |
US5475854A (en) | 1994-01-28 | 1995-12-12 | Vlsi Technology, Inc. | Serial bus I/O system and method for serializing interrupt requests and DMA requests in a computer system |
US5404460A (en) | 1994-01-28 | 1995-04-04 | Vlsi Technology, Inc. | Method for configuring multiple identical serial I/O devices to unique addresses through a serial bus |
JPH0877066A (ja) * | 1994-08-31 | 1996-03-22 | Tdk Corp | フラッシュメモリコントローラ |
JPH08129509A (ja) * | 1994-11-01 | 1996-05-21 | Canon Inc | メモリ制御装置及び方法 |
US5636342A (en) | 1995-02-17 | 1997-06-03 | Dell Usa, L.P. | Systems and method for assigning unique addresses to agents on a system management bus |
US6567904B1 (en) | 1995-12-29 | 2003-05-20 | Intel Corporation | Method and apparatus for automatically detecting whether a memory unit location is unpopulated or populated with synchronous or asynchronous memory devices |
US6418506B1 (en) | 1996-12-31 | 2002-07-09 | Intel Corporation | Integrated circuit memory and method for transferring data using a volatile memory to buffer data for a nonvolatile memory array |
US6453365B1 (en) | 1998-02-11 | 2002-09-17 | Globespanvirata, Inc. | Direct memory access controller having decode circuit for compact instruction format |
US6144576A (en) | 1998-08-19 | 2000-11-07 | Intel Corporation | Method and apparatus for implementing a serial memory architecture |
US6304921B1 (en) | 1998-12-07 | 2001-10-16 | Motorola Inc. | System for serial peripheral interface with embedded addressing circuit for providing portion of an address for peripheral devices |
JP2000288238A (ja) * | 1999-04-02 | 2000-10-17 | Konami Co Ltd | ゲームシステム |
US7827348B2 (en) * | 2000-01-06 | 2010-11-02 | Super Talent Electronics, Inc. | High performance flash memory devices (FMD) |
JP2001051896A (ja) | 1999-08-04 | 2001-02-23 | Hitachi Ltd | 記憶装置 |
US6513094B1 (en) * | 1999-08-23 | 2003-01-28 | Advanced Micro Devices, Inc. | ROM/DRAM data bus sharing with write buffer and read prefetch activity |
US6484250B1 (en) | 2000-01-19 | 2002-11-19 | Qualcomm, Incorporated | Hash technique eliminating pointer storage to reduce RAM size |
JP2001265708A (ja) * | 2000-03-16 | 2001-09-28 | Toshiba Corp | 電子機器及び電子機器の基板 |
US6816933B1 (en) | 2000-05-17 | 2004-11-09 | Silicon Laboratories, Inc. | Serial device daisy chaining method and apparatus |
US6658509B1 (en) | 2000-10-03 | 2003-12-02 | Intel Corporation | Multi-tier point-to-point ring memory interface |
JP3992960B2 (ja) * | 2000-10-26 | 2007-10-17 | 松下電器産業株式会社 | 記録装置及びプログラム |
EP1466326A2 (en) * | 2001-01-17 | 2004-10-13 | Honeywell International Inc. | Enhanced memory module architecture |
US6763424B2 (en) | 2001-01-19 | 2004-07-13 | Sandisk Corporation | Partial block data programming and reading operations in a non-volatile memory |
JP4017177B2 (ja) | 2001-02-28 | 2007-12-05 | スパンション エルエルシー | メモリ装置 |
US6996644B2 (en) | 2001-06-06 | 2006-02-07 | Conexant Systems, Inc. | Apparatus and methods for initializing integrated circuit addresses |
JP2003015928A (ja) * | 2001-07-04 | 2003-01-17 | Nec System Technologies Ltd | フラッシュメモリのデータ格納装置及びそれに用いるデータ格納方法 |
US6928501B2 (en) | 2001-10-15 | 2005-08-09 | Silicon Laboratories, Inc. | Serial device daisy chaining method and apparatus |
ITTO20020118A1 (it) | 2002-02-08 | 2003-08-08 | St Microelectronics Srl | Dispositivo integrante una matrice di memoria non volatile e una matrice di memoria volatile. |
JP2003256269A (ja) | 2002-02-27 | 2003-09-10 | Matsushita Electric Ind Co Ltd | 不揮発性記憶装置の制御方法及びメモリ装置 |
US7073022B2 (en) | 2002-05-23 | 2006-07-04 | International Business Machines Corporation | Serial interface for a data storage array |
US7231484B2 (en) * | 2002-09-30 | 2007-06-12 | Telefonaktiebolaget Lm Ericsson (Publ) | Method and memory controller for scalable multi-channel memory access |
US7032039B2 (en) | 2002-10-30 | 2006-04-18 | Atmel Corporation | Method for identification of SPI compatible serial memory devices |
US7308524B2 (en) | 2003-01-13 | 2007-12-11 | Silicon Pipe, Inc | Memory chain |
US6775184B1 (en) | 2003-01-21 | 2004-08-10 | Nexflash Technologies, Inc. | Nonvolatile memory integrated circuit having volatile utility and buffer memories, and method of operation thereof |
US20040193782A1 (en) * | 2003-03-26 | 2004-09-30 | David Bordui | Nonvolatile intelligent flash cache memory |
JP4460850B2 (ja) | 2003-05-21 | 2010-05-12 | 株式会社東芝 | Icカードとicカードの処理方法 |
CN100353336C (zh) * | 2003-06-27 | 2007-12-05 | 富士通株式会社 | 数据传输方法及系统 |
US20050132128A1 (en) | 2003-12-15 | 2005-06-16 | Jin-Yub Lee | Flash memory device and flash memory system including buffer memory |
US7031221B2 (en) | 2003-12-30 | 2006-04-18 | Intel Corporation | Fixed phase clock and strobe signals in daisy chained chips |
JP4628684B2 (ja) | 2004-02-16 | 2011-02-09 | 三菱電機株式会社 | データ送受信装置及び電子証明書発行方法 |
US7269708B2 (en) * | 2004-04-20 | 2007-09-11 | Rambus Inc. | Memory controller for non-homogenous memory system |
US6950325B1 (en) | 2004-10-07 | 2005-09-27 | Winbond Electronics Corporation | Cascade-connected ROM |
KR100578143B1 (ko) * | 2004-12-21 | 2006-05-10 | 삼성전자주식회사 | 버퍼 메모리에 저장된 데이터를 무효화시키는 스킴을 갖는저장 시스템 및 그것을 포함한 컴퓨팅 시스템 |
KR100626393B1 (ko) | 2005-04-07 | 2006-09-20 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 멀티-페이지 카피백 방법 |
EP1712985A1 (en) * | 2005-04-15 | 2006-10-18 | Deutsche Thomson-Brandt Gmbh | Method and system for storing logical data blocks into flash-blocks in multiple non-volatile memories which are connected to at least one common data I/O bus |
KR101257848B1 (ko) * | 2005-07-13 | 2013-04-24 | 삼성전자주식회사 | 복합 메모리를 구비하는 데이터 저장 시스템 및 그 동작방법 |
US7652922B2 (en) | 2005-09-30 | 2010-01-26 | Mosaid Technologies Incorporated | Multiple independent serial link memory |
US20070076502A1 (en) | 2005-09-30 | 2007-04-05 | Pyeon Hong B | Daisy chain cascading devices |
US7516267B2 (en) * | 2005-11-03 | 2009-04-07 | Intel Corporation | Recovering from a non-volatile memory failure |
JP2007206799A (ja) * | 2006-01-31 | 2007-08-16 | Toshiba Corp | データ転送装置、情報記録再生装置およびデータ転送方法 |
KR100765786B1 (ko) * | 2006-06-12 | 2007-10-12 | 삼성전자주식회사 | 플래시 메모리 시스템, 그 프로그램을 위한 호스트 시스템및 프로그램 방법 |
US7685393B2 (en) * | 2006-06-30 | 2010-03-23 | Mosaid Technologies Incorporated | Synchronous memory read data capture |
US7539811B2 (en) * | 2006-10-05 | 2009-05-26 | Unity Semiconductor Corporation | Scaleable memory systems using third dimension memory |
US7508724B2 (en) * | 2006-11-30 | 2009-03-24 | Mosaid Technologies Incorporated | Circuit and method for testing multi-device systems |
US7554855B2 (en) * | 2006-12-20 | 2009-06-30 | Mosaid Technologies Incorporated | Hybrid solid-state memory system having volatile and non-volatile memory |
KR100909965B1 (ko) * | 2007-05-23 | 2009-07-29 | 삼성전자주식회사 | 버스를 공유하는 휘발성 메모리 및 불휘발성 메모리를구비하는 반도체 메모리 시스템 및 불휘발성 메모리의 동작제어 방법 |
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2006
- 2006-12-20 US US11/613,325 patent/US7554855B2/en active Active
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2007
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- 2007-12-18 WO PCT/CA2007/002304 patent/WO2008074140A1/en active Application Filing
- 2007-12-18 CA CA002669690A patent/CA2669690A1/en not_active Abandoned
- 2007-12-18 EP EP07855586A patent/EP2100306A4/en not_active Withdrawn
- 2007-12-18 JP JP2009541711A patent/JP5619423B2/ja not_active Expired - Fee Related
- 2007-12-18 KR KR1020097013263A patent/KR101495928B1/ko active IP Right Grant
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- 2007-12-18 CN CN201310394806.9A patent/CN103558993A/zh active Pending
- 2007-12-19 TW TW096148758A patent/TWI476780B/zh active
- 2007-12-19 TW TW103145935A patent/TW201517051A/zh unknown
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2009
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-
2011
- 2011-03-03 US US13/040,254 patent/US8670262B2/en active Active
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2013
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- 2013-06-05 JP JP2013119104A patent/JP2013200889A/ja active Pending
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2014
- 2014-03-05 US US14/197,505 patent/US20140185379A1/en not_active Abandoned
-
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0566306A2 (en) * | 1992-04-16 | 1993-10-20 | Hitachi, Ltd. | Semiconductor memory device |
CN1427340A (zh) * | 2001-12-19 | 2003-07-02 | 株式会社东芝 | 电子装置和控制电子装置运行的方法 |
CN1692330A (zh) * | 2002-10-08 | 2005-11-02 | 松下电器产业株式会社 | 程序更新方法和终端设备 |
CN1717662A (zh) * | 2002-11-28 | 2006-01-04 | 株式会社瑞萨科技 | 存储器模块、存储器系统和信息仪器 |
CN1794214A (zh) * | 2005-12-22 | 2006-06-28 | 北京中星微电子有限公司 | 一种对非易失性存储器进行直接存储访问的方法及其装置 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103811051B (zh) * | 2014-02-17 | 2017-01-11 | 上海新储集成电路有限公司 | 一种分层存储器阵列及其工作方法 |
CN104575595B (zh) * | 2014-12-12 | 2017-07-07 | 杭州华澜微电子股份有限公司 | 非易失性随机存取的存储装置 |
CN104575595A (zh) * | 2014-12-12 | 2015-04-29 | 杭州华澜微科技有限公司 | 非易失性随机存取的存储装置 |
CN107209718B (zh) * | 2015-03-11 | 2021-11-19 | 拉姆伯斯公司 | 高性能非易失性存储器模块 |
US11551735B2 (en) | 2015-03-11 | 2023-01-10 | Rambus, Inc. | High performance, non-volatile memory module |
CN107209718A (zh) * | 2015-03-11 | 2017-09-26 | 拉姆伯斯公司 | 高性能非易失性存储器模块 |
CN106484628A (zh) * | 2015-08-27 | 2017-03-08 | 三星电子株式会社 | 基于事务的混合存储器模块 |
CN107515729A (zh) * | 2016-06-24 | 2017-12-26 | 中电海康集团有限公司 | 一种sram位元与非易失性存储位元组成的复合阵列模块及工作方法 |
CN106201902A (zh) * | 2016-06-24 | 2016-12-07 | 中电海康集团有限公司 | 一种sram位元与非易失性存储位元组成的复合阵列模块及其读写控制方法 |
CN107910031B (zh) * | 2016-09-16 | 2020-12-08 | 上海博维逻辑半导体技术有限公司 | 混合非易失性存储器结构及其方法 |
CN107910031A (zh) * | 2016-09-16 | 2018-04-13 | 上海博维逻辑半导体技术有限公司 | 混合非易失性存储器结构及其方法 |
CN108268391A (zh) * | 2016-12-30 | 2018-07-10 | 三星电子株式会社 | 半导体系统及其控制方法 |
CN108268391B (zh) * | 2016-12-30 | 2023-08-08 | 三星电子株式会社 | 半导体系统及其控制方法 |
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TW201517051A (zh) | 2015-05-01 |
US20090279366A1 (en) | 2009-11-12 |
US20080155185A1 (en) | 2008-06-26 |
US20110153973A1 (en) | 2011-06-23 |
KR101495928B1 (ko) | 2015-02-25 |
KR20090102767A (ko) | 2009-09-30 |
US20140185379A1 (en) | 2014-07-03 |
KR101495975B1 (ko) | 2015-02-26 |
KR20130005305A (ko) | 2013-01-15 |
CN101563729B (zh) | 2013-09-25 |
TWI476780B (zh) | 2015-03-11 |
JP2010514017A (ja) | 2010-04-30 |
US8670262B2 (en) | 2014-03-11 |
CA2669690A1 (en) | 2008-06-26 |
JP2013200889A (ja) | 2013-10-03 |
EP2100306A1 (en) | 2009-09-16 |
EP2100306A4 (en) | 2010-03-10 |
US7924635B2 (en) | 2011-04-12 |
JP2013061997A (ja) | 2013-04-04 |
JP5619423B2 (ja) | 2014-11-05 |
US7554855B2 (en) | 2009-06-30 |
TW200841352A (en) | 2008-10-16 |
JP2016026346A (ja) | 2016-02-12 |
CN101563729A (zh) | 2009-10-21 |
WO2008074140A1 (en) | 2008-06-26 |
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