DE69029013D1 - Programmierbare Halbleiterspeicheranordnung - Google Patents

Programmierbare Halbleiterspeicheranordnung

Info

Publication number
DE69029013D1
DE69029013D1 DE69029013T DE69029013T DE69029013D1 DE 69029013 D1 DE69029013 D1 DE 69029013D1 DE 69029013 T DE69029013 T DE 69029013T DE 69029013 T DE69029013 T DE 69029013T DE 69029013 D1 DE69029013 D1 DE 69029013D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
programmable semiconductor
programmable
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69029013T
Other languages
English (en)
Other versions
DE69029013T2 (de
Inventor
Takao Akaogi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69029013D1 publication Critical patent/DE69029013D1/de
Application granted granted Critical
Publication of DE69029013T2 publication Critical patent/DE69029013T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/006—Identification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/20—Initialising; Data preset; Chip identification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
DE69029013T 1989-07-11 1990-07-11 Programmierbare Halbleiterspeicheranordnung Expired - Lifetime DE69029013T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17830489A JP2582439B2 (ja) 1989-07-11 1989-07-11 書き込み可能な半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69029013D1 true DE69029013D1 (de) 1996-12-05
DE69029013T2 DE69029013T2 (de) 1997-05-28

Family

ID=16046133

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69029013T Expired - Lifetime DE69029013T2 (de) 1989-07-11 1990-07-11 Programmierbare Halbleiterspeicheranordnung

Country Status (5)

Country Link
US (1) US4998223A (de)
EP (1) EP0408002B1 (de)
JP (1) JP2582439B2 (de)
KR (1) KR930009542B1 (de)
DE (1) DE69029013T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5680353A (en) * 1988-09-14 1997-10-21 Sgs-Thomson Microelectronics, S.A. EPROM memory with internal signature concerning, in particular, the programming mode
JP2547633B2 (ja) * 1989-05-09 1996-10-23 三菱電機株式会社 半導体記憶装置
US5289417A (en) * 1989-05-09 1994-02-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with redundancy circuit
US5343406A (en) * 1989-07-28 1994-08-30 Xilinx, Inc. Distributed memory architecture for a configurable logic array and method for using distributed memory
JPH03241598A (ja) * 1990-02-19 1991-10-28 Fujitsu Ltd シグネチャー回路
JPH043399A (ja) * 1990-04-19 1992-01-08 Sharp Corp 半導体記憶装置
US5204841A (en) * 1990-07-27 1993-04-20 International Business Machines Corporation Virtual multi-port RAM
US5793667A (en) * 1990-09-19 1998-08-11 The United States Of America As Represented By The Secretary Of The Navy Sense amplifier control system for ferroelectric memories
JPH04132089A (ja) * 1990-09-20 1992-05-06 Nec Ic Microcomput Syst Ltd 識別コード内蔵ｅｐｒｏｍ
US5197029A (en) * 1991-02-07 1993-03-23 Texas Instruments Incorporated Common-line connection for integrated memory array
JP2724046B2 (ja) * 1991-02-07 1998-03-09 富士写真フイルム株式会社 Ｉｃメモリカードシステム
JP3128362B2 (ja) * 1992-12-04 2001-01-29 富士通株式会社 半導体装置
JPH0785685A (ja) * 1993-09-17 1995-03-31 Fujitsu Ltd 半導体装置
JPH07272499A (ja) * 1994-03-30 1995-10-20 Mitsubishi Electric Corp 半導体記憶装置
US5499211A (en) * 1995-03-13 1996-03-12 International Business Machines Corporation Bit-line precharge current limiter for CMOS dynamic memories
JP3531891B2 (ja) * 1996-01-26 2004-05-31 シャープ株式会社 半導体記憶装置
US6188239B1 (en) * 1996-08-12 2001-02-13 Micron Technology, Inc. Semiconductor programmable test arrangement such as an antifuse to ID circuit having common access switches and/or common programming switches
US5976917A (en) 1998-01-29 1999-11-02 Micron Technology, Inc. Integrated circuitry fuse forming methods, integrated circuitry programming methods, and related integrated circuitry
US6609169B1 (en) 1999-06-14 2003-08-19 Jay Powell Solid-state audio-video playback system
JP4645837B2 (ja) * 2005-10-31 2011-03-09 日本電気株式会社 メモリダンプ方法、コンピュータシステム、およびプログラム
JP4745072B2 (ja) * 2006-02-02 2011-08-10 日本無線株式会社 受信装置
JP4704229B2 (ja) * 2006-02-02 2011-06-15 日本無線株式会社 受信装置
US20110099423A1 (en) * 2009-10-27 2011-04-28 Chih-Ang Chen Unified Boot Code with Signature
KR102532528B1 (ko) * 2016-04-07 2023-05-17 에스케이하이닉스 주식회사 메모리 장치 및 이의 동작 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4055802A (en) * 1976-08-12 1977-10-25 Bell Telephone Laboratories, Incorporated Electrical identification of multiply configurable circuit array
CA1158775A (en) * 1980-06-04 1983-12-13 Thomas L. Phinney Computer annotation system
JPS59146498A (ja) * 1983-02-10 1984-08-22 Fujitsu Ltd 半導体記憶装置
US4622653A (en) * 1984-10-29 1986-11-11 Texas Instruments Incorporated Block associative memory
US4667313A (en) * 1985-01-22 1987-05-19 Texas Instruments Incorporated Serially accessed semiconductor memory with tapped shift register
US4744062A (en) * 1985-04-23 1988-05-10 Hitachi, Ltd. Semiconductor integrated circuit with nonvolatile memory
JPS61258399A (ja) * 1985-05-11 1986-11-15 Fujitsu Ltd 半導体集積回路装置
JPS62217498A (ja) * 1986-03-06 1987-09-24 Fujitsu Ltd 半導体記憶装置
JP2559028B2 (ja) * 1986-03-20 1996-11-27 富士通株式会社 半導体記憶装置
US4789967A (en) * 1986-09-16 1988-12-06 Advanced Micro Devices, Inc. Random access memory device with block reset
JPH0632213B2 (ja) * 1987-02-26 1994-04-27 日本電気株式会社 半導体メモリ
JPH01109599A (ja) * 1987-10-22 1989-04-26 Nec Corp 書込み・消去可能な半導体記憶装置

Also Published As

Publication number Publication date
EP0408002A2 (de) 1991-01-16
KR930009542B1 (ko) 1993-10-06
US4998223A (en) 1991-03-05
EP0408002B1 (de) 1996-10-30
DE69029013T2 (de) 1997-05-28
KR910003677A (ko) 1991-02-28
JPH0344899A (ja) 1991-02-26
EP0408002A3 (en) 1992-06-03
JP2582439B2 (ja) 1997-02-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP