WO2004015745A3 - A dmos device with a programmable threshold voltage - Google Patents
A dmos device with a programmable threshold voltage Download PDFInfo
- Publication number
- WO2004015745A3 WO2004015745A3 PCT/US2003/025108 US0325108W WO2004015745A3 WO 2004015745 A3 WO2004015745 A3 WO 2004015745A3 US 0325108 W US0325108 W US 0325108W WO 2004015745 A3 WO2004015745 A3 WO 2004015745A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- threshold voltage
- floating gate
- dmos device
- programmable threshold
- Prior art date
Links
- 239000002800 charge carrier Substances 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 abstract 1
- 230000005641 tunneling Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004528026A JP2005536048A (en) | 2002-08-13 | 2003-08-11 | DMOS device with programmable threshold voltage |
AU2003269956A AU2003269956A1 (en) | 2002-08-13 | 2003-08-11 | A dmos device with a programmable threshold voltage |
EP03751848A EP1550150A4 (en) | 2002-08-13 | 2003-08-11 | A dmos device with a programmable threshold voltage |
CN038241536A CN1692449B (en) | 2002-08-13 | 2003-08-11 | DMOS device with a programmable threshold voltage |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/217,893 | 2002-08-13 | ||
US10/218,010 US6734495B2 (en) | 2002-08-13 | 2002-08-13 | Two terminal programmable MOS-gated current source |
US10/218,010 | 2002-08-13 | ||
US10/217,893 US6882573B2 (en) | 2002-08-13 | 2002-08-13 | DMOS device with a programmable threshold voltage |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004015745A2 WO2004015745A2 (en) | 2004-02-19 |
WO2004015745A3 true WO2004015745A3 (en) | 2004-04-29 |
Family
ID=31720179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/025108 WO2004015745A2 (en) | 2002-08-13 | 2003-08-11 | A dmos device with a programmable threshold voltage |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1550150A4 (en) |
JP (1) | JP2005536048A (en) |
KR (1) | KR20050056200A (en) |
AU (1) | AU2003269956A1 (en) |
TW (1) | TWI320232B (en) |
WO (1) | WO2004015745A2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100881015B1 (en) * | 2006-11-30 | 2009-01-30 | 동부일렉트로닉스 주식회사 | Semiconductor device and method for fabricating the same |
JP5272472B2 (en) * | 2008-03-28 | 2013-08-28 | サンケン電気株式会社 | Semiconductor device |
CN112864234B (en) * | 2019-11-27 | 2022-04-15 | 苏州东微半导体股份有限公司 | IGBT power device |
CN112885900B (en) * | 2019-11-29 | 2022-04-15 | 苏州东微半导体股份有限公司 | IGBT device |
CN112885827B (en) * | 2019-11-29 | 2022-04-15 | 苏州东微半导体股份有限公司 | Semiconductor super-junction power device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5910925A (en) * | 1992-01-14 | 1999-06-08 | Sandisk Corporation | EEPROM with split gate source side injection |
US5963480A (en) * | 1988-06-08 | 1999-10-05 | Harari; Eliyahou | Highly compact EPROM and flash EEPROM devices |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3007892C2 (en) * | 1980-03-01 | 1982-06-09 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Floating gate memory cell |
EP0205637A1 (en) * | 1985-06-25 | 1986-12-30 | Eaton Corporation | Trapped charge bidirectional power fet |
JPS6129177A (en) * | 1984-07-19 | 1986-02-10 | Seiko Instr & Electronics Ltd | Semiconductor nonvolatile memory |
US4589009A (en) * | 1984-10-09 | 1986-05-13 | The United States Of America As Represented By The Secretary Of The Army | Non-volatile piezoelectric memory transistor |
JP2654384B2 (en) * | 1987-09-18 | 1997-09-17 | 株式会社日立製作所 | High power semiconductor device with nonvolatile memory |
JPH022177A (en) * | 1988-06-14 | 1990-01-08 | Sharp Corp | Field effect transistor with floating gate |
JP3367255B2 (en) * | 1995-03-08 | 2003-01-14 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
US5633518A (en) * | 1995-07-28 | 1997-05-27 | Zycad Corporation | Nonvolatile reprogrammable interconnect cell with FN tunneling and programming method thereof |
JP3371708B2 (en) * | 1996-08-22 | 2003-01-27 | ソニー株式会社 | Manufacturing method of vertical field effect transistor |
EP0902438B1 (en) * | 1997-09-09 | 2005-10-26 | Interuniversitair Micro-Elektronica Centrum Vzw | Methods of erasing a memory device and a method of programming a memory device for low-voltage and low-power applications |
JP2000232171A (en) * | 1999-02-10 | 2000-08-22 | Nec Kyushu Ltd | Semiconductor device and its manufacture |
JP2001035942A (en) * | 1999-07-22 | 2001-02-09 | Toyota Central Res & Dev Lab Inc | Non-volatile semiconductor memory device |
DE19941684B4 (en) * | 1999-09-01 | 2004-08-26 | Infineon Technologies Ag | Semiconductor component as a delay element |
JP4277381B2 (en) * | 1999-09-21 | 2009-06-10 | 株式会社デンソー | Silicon carbide semiconductor device and manufacturing method thereof |
-
2003
- 2003-08-11 KR KR1020057002475A patent/KR20050056200A/en active IP Right Grant
- 2003-08-11 JP JP2004528026A patent/JP2005536048A/en active Pending
- 2003-08-11 AU AU2003269956A patent/AU2003269956A1/en not_active Abandoned
- 2003-08-11 WO PCT/US2003/025108 patent/WO2004015745A2/en active Application Filing
- 2003-08-11 EP EP03751848A patent/EP1550150A4/en not_active Withdrawn
- 2003-08-12 TW TW092122157A patent/TWI320232B/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5963480A (en) * | 1988-06-08 | 1999-10-05 | Harari; Eliyahou | Highly compact EPROM and flash EEPROM devices |
US5910925A (en) * | 1992-01-14 | 1999-06-08 | Sandisk Corporation | EEPROM with split gate source side injection |
US5910915A (en) * | 1992-01-14 | 1999-06-08 | Sandisk Corporation | EEPROM with split gate source side injection |
Also Published As
Publication number | Publication date |
---|---|
TWI320232B (en) | 2010-02-01 |
TW200405571A (en) | 2004-04-01 |
EP1550150A4 (en) | 2009-08-19 |
EP1550150A2 (en) | 2005-07-06 |
KR20050056200A (en) | 2005-06-14 |
JP2005536048A (en) | 2005-11-24 |
AU2003269956A8 (en) | 2004-02-25 |
WO2004015745A2 (en) | 2004-02-19 |
AU2003269956A1 (en) | 2004-02-25 |
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